Hello, I am trying to read and write these memories TC58NVG1S3EA00 and H27U1G8F2BTR in my GQ4X4 but I can not find them in the list of devices. Can I add them by hand? What would be the parameters?
Hello, I am trying to read and write these memories TC58NVG1S3EA00 and H27U1G8F2BTR in my GQ4X4 but I can not find them in the list of devices. Can I add them by hand? What would be the parameters?
Hello, I am trying to read and write these memories TC58NVG1S3EA00 and H27U1G8F2BTR in my GQ4X4 but I can not find them in the list of devices. Can I add them by hand? What would be the parameters?
Aren't those Flash NAND?
Hi, I found this info:
The H27U1G8F2BTR-BC is a NAND Flash, it has 128MB x 8-bit with spare 4MB x 8-bit capacity. The device is offered in 3.3V VCC power supply and with x8 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages. A program operation allows writing the 2112 byte page in typical 200µs and an erase operation can be performed in typical 2.0ms on a 128kb block. Data in the page can be read out at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint. NAND Interface - x8 Bus Width, Address/Data Multiplexing, Pin-out Compatibility for All Densities (2K + 64) Bytes x 64 Pages x 1024 Blocks Memory Cell Array (2K + 64 Spare) Bytes Page (128K + 4K Spare) Bytes Block 25µs (Maximum) Random Access 25ns (Minimum) Sequential Access 200µs (Typical) Page Program Time 2ms (Typical) Block Erase Time Fast Block Erase
TC58NVG1S3EA00 and H27U1G8F2BTR in my GQ4X4
Posted - 01/08/2018 : 10:42:57
